In the field of photovoltaic energy, there have developed different methods in order to increase efficiency in the energy converted from solar cells, which commercially does not exceed 16% and has an initial high investment, which results in being amply overcame by other alternatives. From the different studies conducted in the last years, multilayer cell technology is highlighted, which offers a number of advantages in terms of energy, where it is possible to achieve efficiencies above 50%. In this paper, the use of this technology as a replacement to the diffusion doping method in the solar cell is proposed, studying its advantages and disadvantages in a cell-based Ge using two different models: the first one uses the doping method and the second one uses a multilayer cell based on Si/Ge with only a background doping.